Product category:
Power Supply ICs and Controllers
News Release from: ON Semiconductor | Subject: NIS6111
Edited by the Electronicstalk Editorial
Team on 20 January 2005
Integrated rectifier simplifies
high-power design
A device billed as the industry's first self-contained synchronous rectifier relieves designers of the difficult task of achieving high power density using discrete components.
A device billed as the industry's first self-contained synchronous rectifier relieves designers of the difficult task of achieving high power density using discrete components "Achieving acceptable efficiency levels in today's demanding synchronous rectification designs is hard work", said Sue Nee, ON Semiconductor Product Marketing Manager for Application Specific Products
This article was originally published on Electronicstalk on 31 Mar 2003 at 8.00am (UK)
Related stories
Low jitter for drop-in PLL synthesiser replacement
The NBC12429FN is a 3.3/5.0V programmable PLL clock synthesiser that provides a 25 to 400MHz system clock ideal for the primary timing signals in networking, telecomms and test hardware.
Meritorious performance from N-channel MOSFETs
Continuing the expansion of its portfolio of low-voltage power MOSFETs for switching and power management applications, ON Semiconductor has released a range of new N-channel devices.
"Typical designs require many discrete components and usually an extended design time to get the system just right".
"With the introduction of the NIS6111, designers can overcome these hurdles quickly and easily".
"The simplicity and flexibility of the NIS6111 allows it to be dropped into existing power supply designs with only minor layout changes".
The patented NIS6111 is a high-speed, high-efficiency hybrid rectifier that couples a high-speed comparator and MOSFET driver with a power MOSFET to create a diode with the same forward-drop characteristics as a MOSFET.
The low forward drop and fast switching of the NIS6111 improve efficiency and eliminate bulky heatsinks.
They do this by lowering junction temperatures for secondary rectification in flyback or resonant topology switching power supplies.
Furthermore, because it does not have to be ground referenced, it can easily be used as a simple, two-terminal replacement for lossy rectifiers in switching power supplies.
The NIS6111 is capable of blocking up to 24V and has a typical forward voltage drop of 0.1V at a forward current of 20A.
Versions that offer 60 and 100V blocking will be added to the BERS family later in 2005.
In addition to switching power supply designs, the NIS6111 will do equally well as an ORing diode used in highly available products like servers and telecomms equipment.
It provides a solution much less susceptible to PC board layout problems, such as oscillations or slower fault recovery speeds, than a discrete ORing controller and MOSFET.
Also, additional MOSFETs can be added to the NIS6111 to increase its power handling capability.
It can work in conjunction with primary side PWM controllers such as NCP1207, NCP1651 and others to provide ease of design and affordability.
The NIS6111 is offered in a 9 x 9mm QFN package and is priced at $2.99 per unit in 10,000-unit quantities.
Demo boards are available now.
• ON Semiconductor: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page

