Product category:
Discrete Power Devices
News Release from: ON Semiconductor | Subject: Low Vce(sat) BJTs
Edited by the Electronicstalk Editorial
Team on 10 October 2005
Improved silicon technology cuts
transistor losses
New high-performance low-saturation-voltage bipolar junction transistors reduce overall circuit cost while contributing to better power efficiency and longer battery life.
ON Semiconductor has introduced a new family of high-performance low-saturation-voltage bipolar junction transistors (BJTs) that reduce overall circuit cost while contributing to better power efficiency and longer battery life in a wide variety of portable applications - including cellphones, PDAs, media players, notebook computers and digital cameras These innovative low saturation voltage BJTs are miniature surface-mount devices featuring high current gain capability
This article was originally published on Electronicstalk on 31 Mar 2003 at 8.00am (UK)
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By applying improved silicon technology and advanced packaging, the company developed this new series of small, cost-effective BJTs that deliver low saturation voltage performance equivalent to the on-resistance performance of more expensive discrete solutions.
"We have helped some of our customers realise a 10 cents-per-circuit cost savings by implementing the new low Vce(sat) BJTs", said Wes Reid, ON Semiconductor's Product Line Marketing Manager for the Small Signal Division.
"ON Semiconductor's engineering team is also rapidly developing the next generation of low Vce(sat) BJT devices that will reduce equivalent Rds(on) by another 50%, making this cost-saving technology available to more customers and their applications".
ON Semiconductor's new low-saturation-voltage BJTs offer high electrostatic discharge (ESD) tolerance which assists in protecting sensitive components from damage.
Superior electrical performance and a low temperature coefficient work to improve power efficiency and ultimately conserve battery power.
These new transistors can further reduce the overall bill of materials (BOM) by reducing part count in certain applications.
For example, by delivering a low turn-on voltage of less than 1.0V, it may be possible to eliminate the typical charge pumps.
They also enable the elimination of blocking diodes due to their bidirectional current blocking capability.
The BJT series is available in a variety of industry-leading packages, including SOT-23, SC-88, SC-74, TSOP-6 and ChipFET.
They are priced between $0.07 and $0.16 per unit in 10,000-unit quantities.
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