Product category:
Power Supply ICs and Controllers
News Release from: ON Semiconductor | Subject: NCP5106, NCP5104, NCP5111 and NCP5304
Edited by the Electronicstalk Editorial
Team on 04 April 2008
MOSFET drivers provide rugged design
High-voltage high- and low-side drivers are specified over a wide temperature range, and target low- to mid-power applications
ON Semiconductor has expanded its MOSFET driver portfolio with four new devices - the NCP5106, NCP5104, NCP5111 and NCP5304 These new power gate drivers target low- to mid-power applications and can be used in end products such as white goods, lighting ballasts, and industrial applications such as motor control
This article was originally published on Electronicstalk on 31 Mar 2003 at 8.00am (UK)
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The new high-voltage high- and low-side drivers are specified over a wide temperature range from -40 to +125C, and can operate with an input voltage up to 600V, easing time and effort of design.
All the devices feature a dV/dt immunity of 50V/ns and are 3.3 and 5V input logic compatible.
These devices use the bootstrap technique to ensure a proper drive of the high-side power switch and provide rugged design.
The NCP5104, NCP5106B, NCP5111 and NCP5304 are high-voltage power gate drivers that provide two outputs for direct drive of two N-channel power MOSFETs or IGBTs arranged in a half-bridge configuration.
The NCP5106A can be used in any other high-side plus low-side configuration.
Offered in both SOIC-8 and PDIP-8 packages at US $0.80 and $0.96 per unit in 2500-unit quantities, respectively, the NCP5104, NCP5106, NCP5111 and NCP5304 are pin-to-pin compatible with industry standard devices.
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