Product category:
Discrete Power Devices
News Release from: ON Semiconductor | Subject: NTUD312x dual MOSFETs
Edited by the Electronicstalk Editorial
Team on 17 April 2008
Dual MOSFETs save space in portable kit
With a low vertical clearance of 0.5mm, the new SOT-963 packaged NTUD312x devices satisfy the requirements of the new generation ultrathin handheld portable devices.
Three new dual MOSFETs in ultrasmall SOT-963 packages are optimised for space-constrained portable electronics With a footprint of only 1.0 x 1.0mm, the SOT-963 offers 30% smaller mount area than comparable MOSFET solutions offered in a single SOT-723 package and a 60% smaller footprint than SOT-563 devices
With a low vertical clearance of 0.5mm, the new SOT-963 packaged NTUD312x devices satisfy the requirements of the new generation ultrathin handheld portable devices.
The NTUD312x devices have on-resistance values rated at 1.5V gate to source to enable operation at low voltage logic level.
NTUD3127C is a 20V, +200/-180mA complementary small signal MOSFET.
The NTUD3128N is a 20V, 200mA dual N-channel MOSFET.
The NTUD3129P is a -20V, -180mA dual P-channel MOSFET.
Budgetary pricing for these devices is US $0.33 per unit in 8000-unit quantities.
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