Product category:
IC and Hybrid Processing Equipment
News Release from: Oxford Instruments Plasma Technology
Edited by the Electronicstalk Editorial
Team on 02 February 2007
Complex MBE system demonstrates
expertise
Oxford Instruments has delivered a twin V100 molecular beam epitaxy system to a prestigious customer in Asia.
Oxford Instruments has delivered a twin V100 molecular beam epitaxy (MBE) system to a prestigious customer in Asia With an installed base of over 60 systems, the V100 is ideally suited to high-volume production, being fully automated for handling multiple-wafer platens with 4 x 4, 5 x 3 or 12 x 2in capacity
This article was originally published on Electronicstalk on 13 Nov 2006 at 8.00am (UK)
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Arsenic source speeds MBE growth
The new ECellAs valved arsenic effusion source or "cracker cell" for molecular beam epitaxy is designed for high performance MBE growth of arsenic-containing III-V materials.
It is widely used in the manufacture of pHEMT, MESFET and HBT structures as well as the fabrication of high quality laser diodes.
The twin reactor also uses Oxford Instruments' highly stable ThermaCell effusion sources and the 3 litre version of the recently launched ECellAs valved arsenic cracker source.
"The successful delivery of such a complex system further demonstrates the in-depth capability of Oxford Instruments since acquiring the VG Semicon MBE business in October 2003", states Tony Cornish, Business Manager for MBE and Ion Beam Products.
Molecular beam epitaxy enables the growth of semiconductor materials such as gallium arsenide (GaAs) for chips in applications such as mobile phones and other communications devices, indium arsenide (InAs) for infra-red detectors and optoelectronics, and a wide range of other and more complex compound materials which enable modern electronic devices.
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