Smaller die size for 30V process

Edited by the Electronicstalk editorial team Oct 15, 2002

PolarFab now offers a 1.25-micron, 30V junction-isolated modular bipolar process for 6in wafers.

PolarFab now offers a 1.25-micron, 30V junction-isolated modular bipolar process for 6in wafers.

With a smaller feature size of 1.25um, compared with similar processes with a 4.0-micron geometry, the new BP30 process offers both increased packing density and a reduced die size.

The BP30 process is ideal for power management applications up to 30V including amplifiers, line drivers and other linear applications.

PolarFab's new BP30 process employs an innovative lateral isolation technique that provides tight packing density without increasing process complexity.

A washed emitter in the NPN transistor increases the performance of the chip by keeping the size of the NPN small, which reduces parasitics.

The NPN transistor is capable of 3GHz.

The new PolarFab process features an NPN transistor with a 30V BVcer and a 30V BVcbo.

Additionally, the process includes a 30V lateral PNP transistor, a 30V substrate vertical PNP transistor, two implanted resistors, a Schottky diode, a buried zener diode, and high-density capacitors.

Customers can choose between a one- or two-layer metal process.

An isolated vertical PNP transistor is available as an optional module.

The BP30 process provides a complete design environment including a Cadence process design kit (PDK), fully characterised device models, and a comprehensive manual.

Production using the BP30 process will begin in Q4 2002.

The process may be used now for design engineering work.

Pricing and delivery depends on customer requirements.