Power IC process gains more options

PolarFab has added several new features and devices to its 6in wafer PBC4 0.5-micron BCD process.

PolarFab has added several new features and devices to its 6in wafer PBC4 0.5-micron BCD process.

The PBC4 process provides the ability to integrate dense 0.5-micron CMOS with high-voltage drivers, enabling the fabrication of extremely complex smart-power chips.

Designed for smart-power and power management IC applications, the PBC4 process accommodates power levels up to 40V and is ideal for motor controllers, gate drivers, and microprocessor supervisory circuits.

PolarFab has added several new devices and options to its PBC4 process that are useful for portable applications, increasing design flexibility.

The process now includes a low-threshold-voltage option for CMOS devices and high-voltage bipolar (NPN) devices, which are compatible with single-cell battery applications.

In addition, the process now includes a symmetric isolated "mid-volt" (16V) NMOS device developed for line driver applications.

PolarFab has also added an asymmetric NMOS device, a superior power device for 30V applications that has a low specific on resistance of 59mohm/mm2.

40V tubbing has also been added to extend the range of the PBC4 process, enabling sections of the chip to operate at 40V while other circuitry operates at low (5V) and medium (12V) levels.

This increases chip packing density, helping to reduce system implementation costs.

The PBC4 process features: dual gate oxides (5.5 and 16V); complementary N- and P-channel mosfets with 5, 16, and 30V capabilities; a variety of passive elements; and NMOS rated for 40V operation.

Two- and three-layer metal versions of the process are currently available.

PolarFab now offers a completely updated process design kit (PDK) for the PBC4 process, including models for all devices, a digital library, a comprehensive manual, and application notes.

Pricing and delivery depends on customer requirements.

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