Power process gains new devices

Two new devices that reduce die size and chip costs for PolarFab PBC4 0.5-micron BiCMOS-DMOS (BCD) process, have achieved qualification for production on 6in wafers.

Two new devices that reduce die size and chip costs for PolarFab PBC4 0.5-micron BiCMOS-DMOS (BCD) process, have achieved qualification for production on 6in wafers.

Qualification on 8in wafers is expected to be completed by Q3 2003.

The addition of a new high-power driver with an extremely low specific on resistance permits the production of smaller die sizes and lowers chip costs.

The N-channel medium-volt DMOS large angle body (MDL) device also features a 1.3um gate length, a threshold voltage of 2.0V and a maximum operating voltage of 13.2V.

Additionally, a newly added platinum Schottky diode has also been qualified.

Designed for smart-power and power management IC applications, the PBC4 process provides the ability to integrate dense 0.5-micron CMOS with high-voltage drivers, enabling the fabrication of complex smart-power chips.

PBC4 is a true high power BCD process that accommodates power levels of up to 30V, with up to 40V planned for later this year, and is ideal for motor controllers, gate drivers, and microprocessor supervisory circuits.

The PBC4 process features dual gate oxides (5.5 and 16 V) and complementary N- and P-channel mosfets with 5, 16, and 30V capabilities, a 16V poly-poly capacitor, a ZTC poly resistor, and a vertical NPN bipolar junction transistor.

Two- and three-layer metal versions of the process are currently available.

Pricing and delivery is dependant upon customer requirements.

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