Two more devices boost 8in power process

Edited by the Electronicstalk editorial team Oct 24, 2003

PolarFab has qualified two new devices for production on its 8in PBC4 0.5-micron BiCMOS-DMOS process.

PolarFab has qualified two new devices for production on its 8in PBC4 0.5-micron BiCMOS-DMOS (BCD) process.

Newly qualified are a platinum silicide Schottky diode and a medium voltage DMOS large angle body (MDL) device.

The N-channel MDL features a 1.3um gate length, a threshold voltage of 2.0V and a maximum operating voltage of 13.2V.

This high power driver offers an extremely low specific on resistance of 25ohm/mm2, which permits the production of smaller die sizes and lowers chip costs.

PolarFab's PBC4 process enables designers to integrate dense 0.5-micron CMOS with high-voltage drivers, enabling the fabrication of complex smart-power chips, making it ideal for smart-power and power management IC applications such as motor controllers, gate drivers, and microprocessor supervisory circuits.

PBC4, a true high power BCD process, accommodates voltage levels of up to 30V on 8in wafers.

Qualification of levels up to 40V are planned for Q4 2003.

The PBC4 process features dual gate oxides of 5.5 and 16V as well as complementary N- and P-channel mosfets with 5, 16 and 30V capabilities, a 16V poly-poly capacitor, a ZTC poly resistor, and a vertical NPN bipolar junction transistor.

Two- and three-layer metal versions of the process are currently available.

Pricing and delivery is dependant on customer requirements.