Datasheet details power process

Edited by the Electronicstalk editorial team Nov 14, 2003

A new datasheet details the recently refined BP30 process for 6in wafers, PolarFab's 1.25-micron 30V junction-isolated process optimised for high-voltage applications.

A new datasheet details the recently refined BP30 process for 6in wafers, PolarFab's 1.25-micron 30V junction-isolated process optimised for high-voltage applications.

The new datasheet outlines the BP30 process, which features an NPN, lateral and substrate vertical PNPs, two implanted resistors, Schottky and buried zener diodes, high-density capacitors, an optional IVPNP module and a choice of a one- or two-layer metal process.

In addition, the datasheet provides information on the process' NPNgr device that enables the high Bvceo necessary for power management applications up to 30V, such as amplifiers, line drivers and other linear applications.

A representative cross-section showing the BP30's integrated devices is included in the new datasheet.

Also listed in the datasheet is the extensive design support options offered by PolarFab for the BP30 process, which include a Cadence process design kit (PDK), fully characterised device models, ESD protection guidelines and a comprehensive design and layout manual, as well as product development consulting services.

The datasheet can be downloaded from the PolarFab website.