Datasheet updates power management process

Edited by the Electronicstalk editorial team Feb 26, 2004

PolarFab has published a new datasheet on its premier 0.5-micron, 40V BCD/power BiCMOS technology.

PolarFab has published a new datasheet on its premier 0.5-micron, 40V BCD/power BiCMOS technology.

The PBC4 process is available on 6 and 8in wafers and is ideal for power management applications including motor controllers, gate drivers and microprocessor supervisory circuits.

The new datasheet outlines typical uses for the PBC4 process, including its use in 5V CMOS and a range of 12 to 40V LDMOS devices, as well as for all power IC applications at or below 40V.

The datasheet also provides information on the components of the PBC4 process such as dual gate oxides (5.5 and 16V) and complementary N- and P-channel mosfets with 5, 7, 16 and 30V capabilities as well as a 40V capability for NMOS only, a 16V poly-poly capacitor, a ZTC poly resistor, two high-value diffused resistors, a Schottky diode, a lateral PNP and two vertical NPN transistors.

The datasheet also provides information on the two- and three-layer metal versions of the process that are available.

The datasheet lists PolarFab's extensive design support options for the PBC4 process.

These include product development consulting services and a complete design tool kit with models, full-featured Cadence and Silvaco PDKs (process design kits), a comprehensive design and layout manual, as well as information on ESD protection and a digital standard cell library.