New features for process include metal
PolarFab, the only US-owned, pure-play analog and mixed-signal semiconductor foundry, has added a new feature, 2.5-µm thick top metal, to its PBC4 BCD (Bipolar-CMOS-DMOS) process.
PolarFab, the only US-owned, pure-play analog and mixed-signal semiconductor foundry, has added a new feature, 2.5-µm thick top metal, to its PBC4 BCD (Bipolar-CMOS-DMOS) process.
In addition, PolarFab has expanded the PBC4 standard cell library with the addition of silicon-verified pad cells.
PBC4 is a versatile process technology that can used for a broad range of power management and smart-power applications, including motor controllers, gate drivers, and microprocessor supervisory circuits.
The 2.5-µm thick top metal used in conjunction with PolarFab's Low Rdson NMOSTUBMDL device improves current carrying capability and provides a lower total switch resistance per unit area.
This significantly reduces the die size for devices manufactured using the PBC4 process.
For example, the die size for a 12 V driver will be over 65% smaller when manufactured with thick top metal and the Low Rdson NMOSTUBMDL device.
The silicon-verified cell library, consisting of 10 cells, incorporates analog, input, output, and bi-directional pad cells to help reduce design times and increase first pass success for designers.
It is ESD tolerant up to 2 KV human body model (HBM), and works with industry standard design tools, such as Cadence, Mentor Graphics, and Silvaco.
( The PBC4 process, available on 6" and 8" wafers, features 0.5-micron, 40 V BCD/Power BiCMOS technology.
The process includes complementary N- and P-channel MOSFETs with 5 V, 7 V, 16 V, and 30 V capabilities as well as a 40 V capability for NMOS only; dual gate oxides (5.5 V and 16 V); a 16 V poly-poly capacitor, a ZTC poly resistor, two high-value diffused resistors, a Schottky diode, a lateral PNP and two vertical NPN transistors.
Two- and three-layer metal versions of the process are also available.
Pricing and delivery is dependant upon customer requirements.
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