Plug-and-play configuration for basestation amps

Edited by the Electronicstalk editorial team Feb 14, 2003

A new concept for Edge GSM basestation design allows manufacturers to produce a single RF power amplifier chassis that can be customised simply by plugging in RF driver modules and power transistors.

Philips has developed a new concept for Edge GSM basestation design that allows manufacturers to produce a single RF power amplifier chassis that they can customise to operate in the 800, 900, 1800 or 1900MHz bands simply by plugging in appropriate RF driver modules and power transistors.

By eliminating the need to design a separate amplifier assembly for each band, it simplifies component inventory and logistics and reduces manufacturing costs.

The development of this unified modular approach to power amplifier design demonstrates Philips' commitment to staying at the forefront of Edge GSM basestation technology, and consolidates its position as the number-one supplier of LDMOS-based power amplifier solutions for this market.

Philips is already the leading supplier to the world's top three basestation manufacturers and the one of the largest volume suppliers of RF power amplifier components.

"By designing a range of RF driver modules and output transistors with common mounting arrangements and pinning, containing the necessary matching and biasing circuitry, we have made the configuration of Edge GSM basestation power amplifiers a virtual plug-and-play exercise", said Rick Dumont, International Product Marketing Manager for Cellular Basestations at Philips Semiconductors.

Each of the four RF driver modules (one for each band) is a fully integrated 50ohm module delivering either 2.5W Edge output power in the 800 and 900MHz cellular bands or 3.5W power in the 1800 and 1900MHz PCS/DCS bands.

A corresponding internally matched 1 or 2GHz LDMOS power transistor boosts these Edge power levels to 40W in the 800/900MHz or 1800/1900MHz bands.

Philips' unique FlexBase technology ensures that the modules have excellent thermal characteristics, allowing operation at CW powers in excess of 10W at heatsink temperatures of over 90C.

The modules have error vector magnitude (EVM ) linearity figures as low as 1% and an adjacent channel power ratio at 400kHz (ACPR400) better than -63dBc, with corresponding figures for the RF power transistors of 2% and -60dBc.

These figures provide sufficient margin to realise fully Edge compliant power amplifier performance..

(This was Electronicstalk's Top Story on 13 February 2003).