Product category:
Discrete Power Devices
News Release from: NXP Semiconductors | Subject: BFU725F
Edited by the Electronicstalk Editorial
Team on 07 November 2007
Silicon transistor edges into GaAs
applications
Microwave NPN transistor combines high switching frequency, high gain and very low noise to make it an ideal solution for a variety of RF applications.
New from NXP Semiconductors, the BFU725F microwave NPN transistor features an impressive blend of high switching frequency, high gain and very low noise that make it an ideal solution for a variety of RF applications The ultralow noise figure improves the reception of the sensitive RF receivers found in various wireless devices, such as GPS systems, DECT phones, satellite radio, WLAN/CDMA applications, and the high cutoff frequency is ideally suited to meet the needs of applications that operate in the 10 to 30GHz range, such as satellite low-noise blocks
This article was originally published on Electronicstalk on 23 Oct 2001 at 8.00am (UK)
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Developed to address both the performance needs of today's devices and the cost concerns of producers, the BFU725F transistor was developed using NXP's proven silicon germanium carbon (SiGeC) process technology for discrete components, the same process used to develop monolithic ICs and wideband transistors.
"We selected NXP's SiGeC BiCMOS technology, because the end result is a combination of power gain and excellent dynamic range for a cost-effective silicon discrete", says Bruce Bruchan, Director of Engineering Satellite Products, CalAmp Corp.
"NXP's continued development of products produced with SiGeC BiCMOS, demonstrates their commitment to their customers by continually innovating in response to increasing market needs in the fast moving microwave and wireless markets".
Other solutions already on the market include the TFF1004HN, a highly integrated IC for satellite LNBs and the BFU725F microwave transistor, NXP is developing several more silicon-based wideband transistors and MMICs due out later this year and in early 2008.
"QUBiC4X was designed specifically to meet the needs of real-life, high-frequency applications and delivers an unrivalled fusion of high power gain and excellent dynamic range", says Prof Bart Smoulders, Innovation Manager, NXP Semiconductors.
"The idea is to have a silicon-based process with the performance of gallium-arsenide (GaAs) technologies, so we can provide cost-effective integrated high frequency solutions".
The BFU725F is RoHS compliant and permits very low noise (0.43dB at 1.8GHz/0.7dB at 5.8GHz) and high maximum stable gain (27dB at 1.8GHz/10dB at 18GHz).
Unique features include high switching frequency of 70GHz and packaging in a plastic surface-mount package SOT343F.
NXP's BFU725F microwave transistor is available now shipping in high volumes.
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