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IC and Hybrid Processing Equipment
News Release from: Powerlase
Edited by the Electronicstalk Editorial
Team on 01 March 2007
Two lasers to produce EUV light source
Powerlase and the University of Central Florida have teamed up to develop a Laser Produced Plasma (LPP) EUV light source which uses a combination of two lasers for the first time.
Powerlase and the University of Central Florida have teamed up to develop a Laser Produced Plasma (LPP) EUV light source which uses a combination of two lasers The research will develop the EUVL approach into a workable solution for high volume manufacture (HVM) of semiconductor chips
This article was originally published on Electronicstalk on 31 Jul 2008 at 8.00am (UK)
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Powerlase has provided UCF with two of its kilowatt-class Starlase lasers for use as a light source in the development of LPP EUVL.
The two lasers have been multiplexed together in order to increase the power aimed at the EUV target.
EUV power generated at the target has been increased to 23 W, compared with 10W achieved with one laser.
Further reading
High power laser is EUV source
New device firmly places the laser produced plasma EUV source approach as the main contender to be the source of choice for the high volume manufacturing of semiconductor chips.
University helps with plasma research
Powerlase has entered into a partnership with the University of Central Florida to further the development of high-power laser produced plasma EUV sources.
This has the major benefit of increasing the power scalability of the LPP EUV approach.
EUV lithography is used for producing semiconductors with an accuracy of 32nm and below.
This is the first time more than one laser has been used in EUVL light-source generation.
In addition, the conversion efficiency of the laser light into 13.5nm wavelength EUV light from both lasers is similar to when they are used independently of each other.
This demonstrates the capacity to add more lasers to the process without lowering the conversion efficiency - a vital element in making EUV a viable HVM solution.
Dr Samir Ellwi, Powerlase Vice President of Strategic Innovations comments: "We are very pleased to have achieved such a breakthrough in the development of LPP-based EUV Lithography".
"The collaboration with UCF has yielded positive results and our combined research is helping to prove that EUVL is a viable production method for delivering semiconductors with an accuracy of 32nm".
Professor Martin Richardson, Trustee Chair and Northrop-Grumman Professor of X-ray Photonics at UCF, adds: "The two Powerlase lasers used in this collaboration have provided an ideal solid-state laser driven plasma source required for EUV lithography".
"Initial research demonstrated a power of 10W at the EUV target and the addition of a second laser has more than doubled this to 23W, with improvements not only in total output power, but also in power conversion efficiency".
"A direct scale-up of our current system will permit a five-fold increase in power, with additional lasers".
Alongside this successful collaboration with UCF, Powerlase continues to work with leading institutions across the globe.
A Project with University College Dublin is examining ion-emissions at EUV source and a research partnership with the Extreme Ultraviolet Lithography Association (EUVA) in Japan is providing lasers and technical expertise to further develop the EUVL approach.
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