Product category:
Memory Devices and Modules
News Release from: Ramtron International | Subject: 72Mbit NoBL ESRAM
Edited by the Electronicstalk Editorial
Team on 04 July 2002
Fewer errors for high-density SRAM
replacement
Ramtron International subsidiary Enhanced Memory Systems is shipping samples and preproduction quantities of its 72Mbit no bus latency (NoBL) burst enhanced SRAM (ESRAM).
Ramtron International subsidiary Enhanced Memory Systems is shipping samples and preproduction quantities of its 72Mbit no bus latency (NoBL) burst enhanced SRAM (ESRAM) The new 72Mbit NoBL ESRAM, which uses Enhanced's proprietary one-transistor enhanced SRAM (ESRAM) architecture, is the highest-density SRAM replacement product available
This article was originally published on Electronicstalk on 1 Jul 2008 at 8.00am (UK)
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"We are now providing samples and preproduction quantities of our 72Mbit NoBL burst ESRAM to customers", said David Bondurant, vice president of marketing for Enhanced Memory Systems.
"This product family sets new benchmarks for SRAM density, price per bit, and low-power consumption".
Enhanced Memory Systems reckons its one-transistor ESRAM, which uses an advanced trench DRAM process, provides a significant improvement in soft-error performance over both high-density SRAM and embedded SRAMs built on logic-based CMOS processes.
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"Testing of the trench capacitor process shows very low soft-error rates compared to current high-density SRAM and logic-based one-transistor SRAM products", said Dave Fisch, Enhanced business vice president.
"This performance is driven by the Infineon technology used to manufacture our products as well as our patented architecture.
As a result, we expect a significant soft-error advantage".
System failures due to soft errors have become a growing concern in the SRAM industry.
Soft errors occur when an alpha particle emitted by materials in semiconductor packaging or naturally occurring neutrons from cosmic rays disturb a memory storage cell, causing a loss of stored data.
As six-transistor SRAMs are scaled to higher densities, they become increasingly susceptible to soft errors.
The NoBL burst ESRAM provides a significant reduction in soft errors due to its high-capacitance trench capacitor and unique one-transistor SRAM architecture.
SRAM users can now enjoy the speed and performance of SRAM in leading-edge densities without the reliability concerns associated with high-density conventional SRAMs.
The 72Mbit NoBL Burst SRAM products are organized 2M x 36bit, operate at up to 166MHz clock speed and deliver 100% bus bandwidth during 4word read-write transactions.
The products are available with 2.5 or 3.3V power supply options and 100-pin TQFP and 119-pin PBGA packaging options.
72Mbit NoBL is pin-compatible with existing 18Mbit NoBL or ZBT SRAM products to allow multiple SRAMs to be replaced with a single lower-cost, lower-power ESRAM.
Samples are priced at $80 each in small quantities and are available immediately.
The products are pin-function and timing-compatible with NoBL SRAMs, making them ideal upgrades in network systems that require larger SRAM buffer memories.
(This was Electronicstalk's Top Story on 3 July 2002).
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