Product category:
Memory Devices and Modules
News Release from: Ramtron International | Subject: FM25CL04
Edited by the Electronicstalk Editorial
Team on 08 August 2003
FRAM devices shrink to 0.35 microns
Ramtron International has begun sampling the first FRAM (ferroelectric random access memory) built using 0.35-micron design rules.
Ramtron International has begun sampling the first FRAM (ferroelectric random access memory) built using 0.35-micron design rules The FM25CL04 is a 4Kbit SPI interface nonvolatile RAM that operates at 3V and runs up to 20MHz, providing fast data access and simplifying the interface to high-performance processors
This article was originally published on Electronicstalk on 1 Jul 2008 at 8.00am (UK)
Related stories
Nonvolatile memory records energy use
Plogg wireless energy management plugs use serial F-RAM devices for data logging.
F-RAM qualifies for automotive duties
The FM24CL64 is a popular choice for automotive radio applications with its fast writes and high endurance.
When combined with FRAM's virtually unlimited write endurance, the FM25CL04 is an ideal data storage memory.
The FM25CL04 is best suited for two categories of systems: first, applications operating from batteries or limited power sources benefit from its extremely low power operation; secondly, applications needing frequent or rapid writes such as office equipment and automotive applications benefit from the speed and high endurance.
"The 0.35 lithography of the FM25CL04 exhibits ferroelectric's ability to scale effectively", said Mike Alwais, Vice President of FRAM products.
"This new process enables Ramtron to develop highly integrated products in smaller packages, which increases functionality and value for our customers".
Ramtron's new 0.35-micron manufacturing process reduces the operating power and increases the die leverage per wafer compared to earlier generations of Ramtron's FRAM products built on the company's existing 0.5-micron manufacturing line.
The FM25CL04 provides an industry-standard SPI interface to access 4Kbit of nonvolatile RAM.
The product reads and writes continuously at bus speeds of up to 20MHz with no write delays.
Similar EEPROM devices require long millisecond write delays, write polling software, and have endurance limited to less than a million write cycles.
The FM25CL04 operates from a 3V power supply and draws under 75uA for reads and writes at 100kHz.
It offers 10 years of data retention and is rated over the industrial temperature range of -40 to +85C.
Samples of the FM25CL04 are available immediately in 8-pin SOIC packaging.
Pricing starts at $0.59 in 10,000-off quantities.
• Ramtron International: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page

