Product category:
Memory Devices and Modules
News Release from: Ramtron International | Subject: FM20L08 non-volatile FRAM
Edited by the Electronicstalk Editorial
Team on 30 March 2005
Number of read/write cycles are
unlimited
A 1Mbit, 3V, nonvolatile FRAM product in a 32-pin TSOP package is Ramtron's highest-density FRAM to date and offers an unlimited number of read/write cycles.
Available now from Ramtron International, the FM20L08 is a 1Mbit, 3V, nonvolatile ferroelectric random access memory (FRAM) product in a 32-pin TSOP (thin small outline plastic) package The FM20L08 is Ramtron's highest-density FRAM to date and offers an unlimited number of read/write cycles
This article was originally published on Electronicstalk on 4 Jul 2002 at 8.00am (UK)
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The product has been designed as a drop-in replacement for standard asynchronous SRAMs and is targeted for systems that collect and store data where power levels can vary or power can be lost suddenly, such as set-top boxes, automotive telematics and industrial applications.
As a major enhancement to Ramtron's existing parallel FRAM product line, the FM20L08 provides fully compatible SRAM timing with address transition detection (ATD), which allows users to change addresses while leaving the chip enable active.
The FM20L08 responds to each address just like SRAM, greatly simplifying the design engineer's task in using a nonvolatile RAM.
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"The new ATD scheme greatly improves ease of use for design engineers using our parallel FRAM products", said Mike Alwais, Vice President, FRAM Products.
"The FM20L08 drops directly into an SRAM design, allowing the easy replacement of undesirable battery-backed SRAM solutions".
"The product has a diverse target market, and we have seen significant customer interest in samples for end applications such as automotive telematics, set-top boxes, industrial controls, and utility metering".
Ease of use was Ramtron's goal in the design of the FM20L08 feature set.
In addition to acting as a standard SRAM, the product includes an internal voltage monitor to lock-out low voltage access and protect stored data.
The monitor continuously checks the VDD supply voltage and asserts an active-low signal to indicate that the memory is write-protected when VDD drops below a critical threshold.
When the /LVL signal is low, the memory is protected against inadvertent access and data corruption.
The FM20L08 also features software-controlled write protection.
The memory array is divided into eight uniform blocks, each of which can be individually write-protected under software control with no change to hardware or pinout.
In order to provide a convenient interface to current high-performance microprocessors, the FM20L08 includes a high-speed page mode that allows a 4byte burst read- or write-operation at much higher bus speeds than a conventional random access memory.
All data written to the FRAM memory are immediately nonvolatile, without the delays often associated with older nonvolatile memory technologies.
All FRAM products are nonvolatile, allowing data to be retained after power is removed.
FRAM provides nonvolatile data retention comparable to that of other nonvolatile memory technologies, while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM (BBSRAM).
In addition, FRAM's fast write capability and unlimited write endurance make it superior to other types of nonvolatile memory, such as electrically erasable programmable read-only memory (EEPROM) or Flash.
FRAM is superior to BBSRAM in that there is no need for an onboard or external battery to back up data and is inherently highly reliable due to its monolithic form factor.
The FM20L08 is a true surface-mount solution, with no rework steps required for battery attachment, and is highly resistant to negative voltage and undershoots that plague battery-backed SRAM.
The FM20L08 is organised as a 128K x 8bit nonvolatile memory that reads and writes like a standard SRAM.
Access time is 60ns.
The high-speed page mode operation runs up to a bus speed of 33MHz for a 4byte burst.
There are no write delays or maximum write buffer sizes.
The product operates on 3.3V and uses less operating current than standard SRAMs, which results in lower operating power.
The FM20L08 is offered in both an industrial temperature range of -40 to +85C and a commercial temperature range of 0 to +70C.
Cycle time for the commercial part is 150ns, and cycle time for the industrial version is 350ns.
Samples of the FM20L08 are available immediately in 32-pin TSOPs with prices starting at $13.65 in quantities of 10,000.
The part will also be available in a green lead-free package.
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