Ferroelectric RAM scales up to 4Mbit

4Mbit 3V parallel nonvolatile RAM in a 44-pin thin small outline plastic package features fast access, virtually unlimited read/write cycles and low power consumption.

Ramtron International Corp has launched the semiconductor industry's first 4Mbit FRAM - the highest-density ferroelectric RAM device, with quadruple the capacity available to date.

The FM22L16 is a 4Mbit 3V parallel nonvolatile RAM in a 44-pin thin small outline plastic (TSOP) package that features fast access, virtually unlimited read/write cycles and low power consumption.

Pin-compatible with asynchronous static RAM (SRAM), the FM22L16 targets industrial control systems such as robotics, network and data storage applications, multifunction printers, auto navigation systems and a host of other SRAM-based system designs.

"The 4Mbit FRAM breaks new technological ground that will carry Ramtron and FRAM into new and innovative applications", explains Ramtron Vice President Mike Alwais.

"The FM22L16 moves FRAM technology onto a mainstream and proven process node from Texas Instruments (TI) that offers many new stand-alone and integrated product opportunities".

"This introduction positions FRAM as an ideal nonvolatile memory solution with potential to alter the memory landscape".

The FM22L16 is organised as a 256K x 16bit nonvolatile memory, accessed with an industry standard parallel interface.

Access time is 55ns and cycle time is 110ns.

The device reads and writes at bus speed for NoDelay writes with endurance of at least 100 trillion writes and 10-year data retention.

This 4Mbit FRAM is a drop-in replacement for standard asynchronous SRAMs, but far superior as it does not require a battery for data backup and is inherently more reliable due to its monolithic form.

The FM22L16 is a true surface-mount solution, requiring no rework steps for battery attachment and, unlike SRAM, is highly resistant to moisture, shock and vibration.

With a convenient interface to current high-performance microprocessors, the FM22L16 features a high-speed page mode that enables 4byte burst read/write operations at up to 40MHz, a bus speed significantly higher than conventional RAM.

The device boasts a lower operating current than standard SRAMs, drawing 18mA for reads/writes and an ultralow current sleep mode of 5uA.

It operates from 2.7 to 3.6V over the industrial temperature range of -40 to +85C.

The FM22L16 is based on TI's proven, advanced 130nm CMOS manufacturing process.

Only two additional mask steps have been used to embed the nonvolatile FRAM module within the standard CMOS 130nm logic process.

Engineering samples of the FM22L16 are available now.

Limited volumes of the FM22L16 are planned for the third quarter of 2007, with full volume production slated for the fourth quarter.

The device is available in a 44-pin TSOP-II package that is RoHS-compatible.

Pricing starts at US $19 for quantities of 10,000 units.

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