Product category:
Memory Devices and Modules
News Release from: Ramtron International | Subject: FM25H20
Edited by the Electronicstalk Editorial
Team on 18 April 2008
FRAM offers upgrade for Flash
applications
High-density nonvolatile ferroelectric RAM features low power consumption and communicates via a high-speed serial peripheral interface.
Ramtron has unveiled the industry's first 2Mbit FRAM in an 8-lead TDFN (5.0 x 6.0mm) package Manufactured on an advanced 130um CMOS process, the FM25H20 is a high-density nonvolatile FRAM that operates at low power and features a high-speed serial peripheral interface (SPI)
This article was originally published on Electronicstalk on 4 Jul 2002 at 8.00am (UK)
Related stories
Fewer errors for high-density SRAM replacement
Ramtron International subsidiary Enhanced Memory Systems is shipping samples and preproduction quantities of its 72Mbit no bus latency (NoBL) burst enhanced SRAM (ESRAM).
French award for FRAM
Leading French electronics magazine Electronique has awarded this year's prize in the processors and memories category of its annual Electron D'Or awards to the FM24C256-SE FRAM.
The 3V 2Mbit serial FRAM writes at maximum bus speed with virtually unlimited endurance for greater data collection capacity in a tiny package, enabling system designers to reduce costs and board space in a range of advanced applications including meters and printers.
The FM25H20 is an ideal replacement for serial Flash in sophisticated electronic systems that require low power and minimal board space.
These include portable medical devices such as hearing aids, which are essentially mini data processors with limited space and low power budgets.
Further reading
Long-life FRAM cuts power to oust EEPROMs
Ramtron has expanded its low-power ferroelectric random access memory (FRAM) product line with the introduction and availability of the 4Kbit FM24CL04.
TI pushes FRAM technology to new heights
Texas Instruments has produced a 64Mbit ferroelectric RAM chip to further validate Ramtron's patented FRAM technology as a foundation for next-generation nonvolatile memory.
FRAM benefits over Flash include significantly lower operating currents, faster writes and write endurance that is orders of magnitude greater than Flash.
"The 2Mbit serial FRAM is a natural extension for our metering and printer customers who want to increase data collection capacity in their next-generation applications without increasing board space".
"The FM25H20 offers our half megabit serial FRAM customers quadruple the memory in the same small footprint", explains Duncan Bennett, Ramtron Strategic Manager.
"In addition to enhancing existing systems, this technological development moves FRAM into a range of new markets that require a low-power memory in a very constrained space, such as portable medical devices".
The FM25H20 is organised as a 256K x 8bit nonvolatile memory that reads and writes at bus speed up to 40MHz, with essentially unlimited endurance, 10-year data retention and low operating currents.
The device incorporates an industry-standard SPI interface that optimises FRAM's high-speed write capability.
A hardware and software write protection feature is also included on the FM25H20 to prevent inadvertent writes and data corruption.
The 2Mbit serial FRAM operates at low power, drawing less than 10mA for reads/writes at 40MHz, 80uA (typical) in standby, and 3uA (typical) in ultra-low-current sleep mode.
Pin-compatible with equivalent serial Flash devices, but far superior because of its fast access time, high endurance and low operating current, the 2Mbit FRAM operates from 2.7 to 3.6V over the entire industrial temperature range (-40 to +85C).
• Ramtron International: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page

