Product category:
Memory Devices and Modules
News Release from: Renesas Technology Europe
Edited by the Electronicstalk Editorial
Team on 24 November 2003
Outsourcing to meet increased Flash
demand
Renesas Technology is to increase production of 1Gbit AG-AND Flash memory in response to rapidly growing demand.
Renesas Technology is to increase production of 1Gbit AG-AND Flash memory in response to rapidly growing demand AG-AND (the AG stands for assist gate) is a Flash memory cell developed by Renesas Technology
This article was originally published on Electronicstalk on 15 Apr 2004 at 8.00am (UK)
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The cell structure employs original field isolation technology comprising a combination of alternating assist gates that prevent intercell interference and floating gates, enabling a smaller cell area and high-speed procession.
The main source of the increased demand comes from the growth of the digital stills camera market.
At the same time, demand is growing rapidly in such new application areas as rewriteable USB drives for PCs and optional memory for mobile phones.
Already this year Renesas has invested a further Y25 billion in its affiliate Trecenti Technologies (TTI), the main 1Gbit AG-AND Flash memory production base, to increase production capacity.
Now, to secure even greater production capacity in line with rapidly expanding demand, Renesas is adopting a foundry-based approach and has concluded a contract with Powerchip Semiconductor Corp of Taiwan to outsource 1Gbit AG-AND using 130nm design rules, with mass production scheduled to begin in the first half of fiscal 2004.
This will increase monthly production capacity from the current level of 1.8 million units to 5 million units during fiscal 2004, to meet customers needs.
Future plans call for the phased introduction and mass production of 4Gbit, 90nm design rule products in fiscal 2004 and 8Gbit products in fiscal 2006.
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