Big AND Flash memories write faster

A new series of 256Mbit AND Flash memories offers a write speed three times faster than that of the current 128Mbit version, and improved ease of use through on-chip memory management functions.

A new series of 256Mbit AND Flash memories offers a write speed of approximately 4Mbyte/s, three times faster than that of the current 128Mbit version, and improved ease of use through on-chip memory management functions.

It is available in the same small CSP package as the current model.

The Flash memory is suitable for use in consumer products such as next-generation mobile phones, digital still cameras (with moving image capability) and portable information devices such as PDAs and handheld PCs.

The new series uses a 0.13-um process and Renesas Technology's AG-AND Flash memory cell technology that offers multilevel cell technology and high speed.

Two 3.3V power supply voltage models are available: the x16bit configuration HN29V256A0B, which supports a 16bit bus width, and the x8bit configuration HN29V256A1B, which supports an 8bit bus width.

These provide a choice to suit the user's system design.

The provision of on-chip memory management functions, such as bad-sector management, wear levelling and error correction, reduces the design workload by simplifying the system design.

This is because these functions are usually handled on the system side when AND Flash memory is embedded in an end product.

The functions have been optimised for on-chip use based on technological experience gained in the development of controllers for Flash cards such as CompactFlash and MultiMediaCards.

The on-chip bad-sector management function enables the Flash memory to detect a defect and automatically switch to a spare sector if an abnormality occurs in a certain sector during rewriting.

This allows the chip to achieve 100% perfect operation throughout its lifetime, regardless of whether a defect is present when the chip is shipped or occurs after shipment, enabling system design to be completed in a short period.

The wear levelling function allows effective use of Flash memory rewrite areas and enables Flash life to be extended.

It does this by automatically switching data and addresses to an area in which few rewrites have been performed when rewrite operations reach a predetermined number of times, therefore preventing any concentration of write operations.

The error correction function enables the chip to detect the location at which an error occurs and correct it if read data differs from written data when data is read.

This provides data reliability and enables the design workload to be reduced on the system side.

The new devices also offer a power-on auto-read function which enables data to be read when the power is turned-on even without command or address input.

The readable size has been extended from 2Kbyte in the current 128Mbit models to 8Kbyte in the new series.

The new series is available in a 10 x 11.5 x 1.2mm 95-ball CSP, the same package used for the current 128Mbit superAND Flash memory.

This enables system size to be kept compact and facilitates the replacement of 128Mbit products.

Sample shipments of the HN29V256A0B and the HN29V256A1B will begin in March 2004 in Europe.

Back to top