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Product category: Discrete Power Devices
News Release from: Rohm Electronics | Subject: 2SK2103 and 2SK3065
Edited by the Electronicstalk Editorial Team on 11 December 2001

MOSFETs optimised for high-speed
switching

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Rohm Electronics has expanded its family of high-efficiency, miniature power MOSFETs with new 30 and 60V devices that are optimised for high-speed switching.

Rohm Electronics has expanded its family of high-efficiency, miniature power mosfets with new 30 and 60V devices that are optimised for high-speed switching The new 2SK devices will be particularly suited to DC/DC conversion and motor drive designs in applications ranging from portable, battery-powered systems to computers and office equipment

Supplied in Rohm's miniature surface-mount MPT3 (SOT-89) power packages, the 2SK2103 and 2SK3065 have dimensions of 4.5 x 2.5mm and are designed to handle a maximum continuous drain current of 2A.

Maximum drain-source voltage for the 2SK2103 is 30V, whereas the 2SK3065 will meet the needs of applications requiring drain-source voltages of up to 60V.

The 2SK2103 and 2SK3065 mosfets feature a typical on resistance (RDS(ON)) of just 0.25ohm and can be driven with supply voltages of 4 and 2.5V, respectively.

Maximum total power dissipation is as low as 0.5W for each device depending on application.

Both the 2SK2103 and the 2SK3065 N-channel mosfets are rated for a maximum gate-source voltage of +/-20V.

In addition, the 2SK3065 device incorporates a built-in protection diode between gate and source to protect against static electricity when the product is in use.

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