Shrinking MOSFETs maintain high power capabilities

A new series of low-on-resistance 20-30V MOSFETs from Rohm offer higher drain currents and power ratings in a smaller package size than has previously been possible.

A new series of low-on-resistance 20-30V mosfets from Rohm offer higher drain currents and power ratings in a smaller package size than has previously been possible.

Suitable for load switching applications where space is an issue, the new devices are ideal for portable and battery driven equipment such as mobile phones and PDAs.

They are also well suited for DC/DC conversion applications.

Supplied in a TSMT6 package measuring just 2.9 x 1.6 x 1.0mm, the new N- and P-channel mosfets offer total power ratings of up to 1.25W despite their miniature packaging.

This high power capability has been achieved as a result of on-resistance values down to just 26mohm (depending on the device chosen).

Rohm's new mosfets have rated drain current options of 0.5 to 4.5A, and power dissipation ratings range from 1 to 1.25W.

Gate drive voltages are 2.5 or 4.0V depending on the particular device.

The series includes both single- and dual-mosfet options, each of which can be supplied with or without a built-in Schottky diode.

Back to top