Product category:
Discrete Power Devices
News Release from: Rohm Electronics | Subject: TSMT and TUMT packaged MOSFETs and BJTs
Edited by the Electronicstalk Editorial
Team on 21 October 2003
Transistors shrink for ultraminiature
applications
Ultraminiature surface mount MOSFETs and bipolar junction transistors are now available in packages as small as 2.0 x 1.7 x 0.85mm.
Rohm has expanded its family of ultraminiature surface mount mosfets and bipolar junction transistors (BJTs) with devices in TSMT packages that measure only 2.9 x 1.6 x 1.0mm, and in TUMT packages that have dimensions of just 2.0 x 1.7 x 0.85mm The new 3-, 5- and 6-pin TSMT-packaged mosfets and BJTs are ideally suited to power management and high-speed switching in mobile phones, PDAs and other portable, battery-powered applications where space and efficiency are key design criteria
This article was originally published on Electronicstalk on 29 May 2008 at 8.00am (UK)
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Available in N-channel and P-channel formats, Rohm's 20 and 30V TSMT mosfets have current ratings up to 4.5A and power ratings up to 1.25W.
Typical on-resistance values are down to 31mohm at a VGS of 4V (dependant on device chosen).
The TUMT mosfets have drain currents up to 3A, and on-resistance values are as low as 50mohm at a VGS of 4V.
Power dissipation for the TUMT devices is rated at 0.8W.
Both series includes single- and dual-mosfet options, each of which can be supplied with or without a built-in Schottky diode.
Suitable for high-speed switching Rohm's new BJT series features TSMT packages in NPN or PNP versions.
Low saturation voltage and high voltage discharge options can be supplied, and collector currents range from 1A to 4A.
Power dissipation for all of the devices is rated at 0.5W, and voltage options are 12, 30, 60 and 90V.
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