Product category:
Discrete Power Devices
News Release from: Shindengen UK | Subject: Low-IR SBDs (DF20JC10 etc)
Edited by the Electronicstalk Editorial
Team on 03 October 2001
Schottky diodes improve reverse current
losses
New Schottky barrier diodes (SBDs) from Shindengen address the improved output voltage requirements of today's AC adapters through dramatic improvements in reverse current.
New Schottky barrier diodes (SBDs) from Shindengen address the improved output voltage requirements of today's AC adapters through dramatic improvements in reverse current - with no corresponding reduction in forward voltage Where existing SBD rectifiers are limited to low power applications, the new J series offers designers greater efficiency in higher-temperature environments, extending their application to higher-dissipation power supplies
This article was originally published on Electronicstalk on 17 Aug 2001 at 8.00am (UK)
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In such designs, efficiency of SBDs is significantly reduced by reverse current leakage at high temperatures.
Shindengen has applied decades of world-recognised Schottky barrier expertise to enhance the trade-off between forward voltage and reverse current, paying particular attention to optimisation of the wafer structure and the mechanisms of barrier formation.
These developments are embodied in a range of 19 new low-IR diodes, offering output current up to 30A and withstand voltages of 40, 60, 100 and 120V.
There is a more than tenfold improvement in reverse current for the 40, 60 and 100V devices.
For example, the 100V DF20JC10 provides 20A output current and just 0.7mA reverse leakage current, compared with around 10mA leakage for other equivalent devices.
This has a dramatic impact on power loss, with no significant increase in losses even above 100C.
Improvements are even more dramatic for the 120V devices, which show a two-digit reduction in reverse leakage current.
All J-series Schottky barrier diodes are available now, in a choice of FTO-220 or STO-220 packages.
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