Product category:
Communications ICs (Wireless)
News Release from: SiGe Semiconductor
Edited by the Electronicstalk Editorial
Team on 22 January 2003
IBM deal boosts SiGe capabilities
SiGe Semiconductor has signed an agreement with IBM under which SiGe Semiconductor will be granted assignments and licenses to intellectual property associated with IBM power amplifier products.
SiGe Semiconductor has signed an agreement with IBM under which SiGe Semiconductor will be granted assignments and licenses to intellectual property associated with IBM power amplifier products The complete portfolio includes seven devices in various stages of design, which SiGe Semiconductor expects will enhance performance of 2G, 2.5G and 3G cellular handsets
This article was originally published on Electronicstalk on 24 Jun 2008 at 8.00am (UK)
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Under a separate agreement with IBM, SiGe Semiconductor is acquiring certain design and test equipment, to be housed at the company's new facilities in the Boston, Massachusetts area.
This, combined with a foundry agreement with IBM, under which IBM will manufacture these power amplifier devices for SiGe Semiconductor, will help enable the company to quickly bring these new products to market.
The first three power amplifiers for 2G and 2.5G cellular handsets are sampling to lead customers now, sold under SiGe Semiconductor's RangeCharger brand.
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WLAN front ends shrink for portable appeal
Complete 802.11a/b/g/n WLAN RF front-end modules provide all the functionality required between the transceiver and the antenna in dual-band Wi-Fi systems.
Power amplifiers cut Wi-Fi costs
SiGe Semiconductor has released two new power amplifiers that provide manufacturers with the lowest cost route to developing Wi-Fi systems.
RF front-end module optimises Wi-Fi systems
The SE2593A delivers a complete 2.4 and 5GHz WLAN multiple input, multiple output (MIMO) RF solution including all of the circuitry required between the transceiver and the antennas
The roadmap includes GPRS and Edge capable quad-band GSM power amplifiers for 2.5G mobile handsets, as well as 4x4 matched CDMA power amplifier modules for 2.5G and 3G mobile handsets.
"This agreement presents an ideal opportunity to expand our product line and enter new markets where our core expertise in silicon germanium will provide significant advantages to our customers", said Jim Derbyshire, President and CEO, SiGe Semiconductor.
"With the broadest selection of silicon germanium power amplifiers on the market, we expect to quickly capture market share, and secure our place among lead competitors".
Silicon germanium power amps present major advantages to cellular market SiGe Semiconductor's first products to sample include the SE5100 and SE5101 for CDMA/AMPS handsets operating in the 824 to 849MHz frequency band; and the SE5111 for CDMA/PCS handsets operating in the 1850 to 1910MHz band.
The new power amplifiers are based on a highly efficient silicon germanium BiCMOS process that improves power efficiency, linearity and integration.
Using this process, the SE5100, SE5101 and SE5111 include bias circuits that enable operation over broad dynamic range and guarantee ruggedness under high voltage standing wave ratio (VSWR) conditions.
This is a substantial advantage over gallium arsenide (GaAs) alternatives, which may require more expensive power amplifier ICs and CMOS control ICs to achieve the same levels of control and performance.
All three power amplifiers are available now.
The SE5100 is supplied in a 4 x 4mm QFN, whilst the SE5101 and SE5111 are each supplied in a 6 x 6 mm low-profile matched module.
The devices will be featured at booth #G16 in the UK Pavilion at the 3GSM conference, 17th-21st February 2003.
Silicon germanium ICs expected to gain higher profile in cellular market The total market for cellular power amplifiers used in 2G, 2.5G and 3G phones is expected to represent a US $1.4 billion opportunity by 2005 (InStat/MDR).
SiGe Semiconductor believes that silicon germanium based power amplifiers will displace GaAs alternatives, as consumer pressures continue to drive handset prices down.
Since silicon germanium is based on conventional high-volume VLSI processes, devices can be produced at higher yields and at a fraction of the price of GaAs ICs.
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