Product category:
Communications ICs (Wireless)
News Release from: SiGe Semiconductor | Subject: SE2526A
Edited by the Electronicstalk Editorial
Team on 20 June 2003
Integrated front end cuts dual-mode
design in half
SiGe Semiconductor is sampling a device it claims to be the industry's highest performance, most cost effective RF front-end for dual-mode 802.11b/g WLAN systems.
SiGe Semiconductor is sampling a device it claims to be the industry's highest performance, most cost effective RF front-end for dual-mode 802.11b/g WLAN systems The SE2526A features industry-leading data throughput and transmission range, while providing a fully tested, RF front-end solution priced at less than $2.00 each in volume quantities
This article was originally published on Electronicstalk on 21 Jul 2004 at 8.00am (UK)
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The SE2526A RF front-end integrates a high-performance power amplifier, power detector, transmit/receive switch, diversity switch and filtering into a compact chip-scale device that is fully matched to 50ohm.
The SE2526A replaces up to 40 components typically required for the RF front end, and is supplied in a laminate package measuring 5.5 x 7.0 x 1.4mm.
This form factor is 50% smaller than competitive module solutions, making the SE2526A ideal for Wi-Fi systems including access points, PCMCIA cards, PC cards, PDAs and cellular phones.
Further reading
Amplifier IC upgrades Wi-Fi performance
High linearity Wi-Fi power amp optimises transmission of greater datarates over longer distances, allowing systems to support emerging wireless multimedia applications.
WLAN front ends shrink for portable appeal
Complete 802.11a/b/g/n WLAN RF front-end modules provide all the functionality required between the transceiver and the antenna in dual-band Wi-Fi systems.
In further support of embedded, portable applications, the SE2526A consumes just 160mA in 802.11g mode, operating from a single 3.0-3.6V supply.
Based on SiGe Semiconductor's proven high-performance 802.11b/g power amplifier, the SE2526A delivers power output of +16dBm while achieving an Error Vector Magnitude (EVM) of less than three percent operating in 802.11g mode.
In 802.11b mode, the SE2526A delivers +20dBm output power with an adjacent channel power ratio (ACPR) of better than -35dBc.
The industry-leading EVM, ACPR and harmonic performance ensures high data throughput and longer range while operating in 54Mbit/s 802.11g mode.
"Through collaboration with partners and customers implementing our existing power amplifiers, we've gained significant expertise solving the RF front-end design challenges associated with matching, tolerance and component placement", said Bill Cuming, Vice President Product Marketing, SiGe Semiconductor.
"Channelling this expertise to deliver complete front-ends allows us to take the risk out of RF design for our customers, thereby simplifying manufacture and improving yields.
Using the SE2526A, customers can effectively integrate 802.11b/g capability, allowing fast time-to-market for next-generation products".
The 802.11g specification is expected to emerge as the preferred wireless technology for high-datarate access in hotspot, home, enterprise and SOHO environments.
Able to support data rates up to 54Mbit/s in the 2.4GHz frequency band, the technology provides five times the speed of 802.11b networks, while maintaining backward compatibility with the large installed base.
SiGe's roadmap includes power amplifiers and RF front-ends that meet all of the requirements of multimode, multiband products supporting 802.11a/b/g systems.
The SE2526A RF front end is sampling to lead customers now, with general sample availability in Q3 2003.
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