Product category:
Communications ICs (Wireless)
News Release from: SiGe Semiconductor | Subject: RangeCharger SE5120
Edited by the Electronicstalk Editorial
Team on 25 February 2004
WCDMA amplifier leads new performance
generation
SiGe Semiconductor is claiming a technology breakthrough with the RangeCharger SE5120, a new power amplifier for WCDMA cellular handsets.
SiGe Semiconductor is claiming a technology breakthrough with the RangeCharger SE5120, a new power amplifier for WCDMA cellular handsets Leveraging an advanced silicon germanium process, the SE5120 delivers benchmark levels of integration and performance, allowing designers to build third generation (3G) cellular handsets with higher signal quality, smaller form factors and reduced cost
This article was originally published on Electronicstalk on 24 Jun 2008 at 8.00am (UK)
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The RangeCharger SE5120 is optimised for WCDMA handsets operating in the 1920-1980MHz band.
The power amplifier is the first new cellular amplifier to be produced by SiGe using technology licensed from IBM in January 2003, and is manufactured for SiGe Semiconductor by IBM under its foundry agreement.
This silicon germanium BiCMOS process allows SiGe Semiconductor to produce power amplifiers with the performance level of GaAs, at the cost of silicon.
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As a result, the SE5120 offers a lower cost solution when compared to competing devices.
The SE5120 will further reduce handset cost through integration.
The use of the SiGe process allows the integration of the power amplifier, regulator, matching circuitry and optional power detector into an industry-standard 8-pin QFN package measuring just 3 x 3 x 0.9mm.
This is the highest level of functional integration of any linear power amplifier on the market.
By eliminating requirements for the external switch, regulator, isolator and detector, the SE5120 can reduce the cost of the system bill of materials by as much as $2.80.
"The SE5120 is a striking example of how we've passed integration, low cost and performance advantages of the silicon germanium BiCMOS process on to our customers", said Jose Harrison, Product Line Manager, Cellular, SiGe Semiconductor.
"Other silicon-based CDMA power amplifiers have hit the market.
However, they are not commercially viable, since they are generally large and hence do not enable the cost advantages of silicon to be realised.
The SE5120 not only solves these challenges, but also meets the linearity, power added efficiency and ruggedness required to ensure high performance, longer talk time and reliability".
The SE5120 is a single-band, three-stage power amplifier with industry-leading linearity and efficiency.
The power amplifier achieves peak output power of +28dBm in WCDMA operation with linearity of -38dBc and power-added efficiency exceeding 40%.
With integrated biasing and gain control circuitry, as well as on-chip electrostatic discharge and load mismatch protection circuitry, the SE5120 ensures reliable performance under voltage standing wave ratio (VSWR) conditions of 10:1, at all phases and supply voltages.
To extend battery life, the new WCDMA power amplifier offers separate power supply pins to the control circuits and the power amplifier cells.
This allows designers to regulate the amplifier's supply voltage and improve efficiency at low power levels.
The new WCDMA power amplifier also features a sleep mode with a low standby current of 2uA.
The SE5120 combines features that provide the high performance required by 3G UMTS handsets, and that meet consumer expectations for longer talk time, while reducing the handset cost through lower product pricing and reduced bill of materials.
SiGe Semiconductor provides evaluation kits, supplied with full hardware and software documentation.
The SE5120 is the first in a series of 3G cellular power amplifiers, and is to be quickly followed by products for GSM/GPRS, Edge and CDMA markets.
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