Product category:
Communications ICs (Wireless)
News Release from: SiGe Semiconductor | Subject: SE5103L, SE5106L and SE5107L
Edited by the Electronicstalk Editorial
Team on 17 March 2004
Power amps oust GaAs from CDMA handsets
SiGe Semiconductor has released the industry's first commercially viable silicon-based CDMA power amplifiers.
SiGe Semiconductor has released the industry's first commercially viable silicon-based CDMA power amplifiers Leveraging a highly efficient silicon-germanium BiCMOS process, the three power amplifiers achieve performance parity with GaAs-based devices, while delivering the integration, manufacturing and price benefits of silicon
This article was originally published on Electronicstalk on 24 Jun 2008 at 8.00am (UK)
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SiGe's new power amplifiers include the SE5103L, SE5106L and SE5107L.
All three devices feature industry-leading integration with on-chip digital or analogue bias control, as well as an integrated power detector, 2.8V regulator, all matching and harmonic tuning.
The highly integrated architecture allows designers to eliminate external components including the regulated switch, isolator and detector.
Further reading
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Complete 802.11a/b/g/n WLAN RF front-end modules provide all the functionality required between the transceiver and the antenna in dual-band Wi-Fi systems.
Power amplifiers cut Wi-Fi costs
SiGe Semiconductor has released two new power amplifiers that provide manufacturers with the lowest cost route to developing Wi-Fi systems.
Eliminating these components yields a cost savings of about $3.00 per handset.
The new RangeCharger power amplifiers feature excellent linearity of less than -50dBc at a peak output power of +28dBm, and a power added efficiency (PAE) exceeding 41%.
Additional features include electrostatic discharge (ESD) up to 2kV, and load mismatch protection circuitry.
These features ensure reliable performance under voltage standing wave ratio (VSWR) conditions of 10:1, at all phases and maximum supply voltage.
"SiGe Semiconductor excels at linear PAs", said Jose Harrison, Product Line Manager, SiGe Semiconductor.
"We've capitalised on all of the benefits offered by silicon germanium to provide designers with the linearity, efficiency and ruggedness required for high performance operation while maintaining the superior heat dissipation, thermal performance, integration and manufacturability characteristics of the silicon process".
The SE5103L, SE5106L and SE5107L are single-band, two-stage power amplifiers ideal for IS-95 and CDMA cellular handsets operating in the 824-849MHz cellular band.
The series provides flexibility to meet system design requirements, with options for analogue or digital bias control.
The SE5103L includes digital bias control, and is offered in a standard 4 x 4 x 0.9mm QFN package.
The SE5106L and SE5107L provide digital and analogue bias control, respectively, and are supplied in standard 3 x 3 x 0.9mm QFN packages.
Supplied in standard packages that support industry standard pinout, these devices can be used as drop-in replacements allowing designers to quickly realise savings in cost-reduction redesigns.
All three power amplifiers feature separate power supply pins to the control circuits and the power amplifier cells.
This allows designers to regulate the amplifier's supply voltage down to 0.8V to further improve efficiency at low power levels.
Each device features a sleep mode with a low standby current of 2uA.
SiGe Semiconductor is supporting the devices with evaluation kits, supplied including full hardware and software documentation.
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