Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: R5 MOSFETs
Edited by the Electronicstalk Editorial
Team on 05 April 2001
Rad-hard MOSFETs protect and survive
With high radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays.
With high radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 mosfets are well suited for systems that must survive penetrating gamma rays and neutron fluence from nuclear detonation Applications include radiation-sensitive military avionics and missiles, commercial communication satellites, scientific and surveillance satellites, nuclear reactors, deep-space equipment such as robotic systems for missions to Jupiter or Saturn, and strategic command and control systems
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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1kV rad-hard power MOSFET saves satellite space
International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
The new devices come in three die sizes and eight package styles.
Packaging includes industry-standard hermetic-leaded (through-hole) and space-saving surface mount, including the tab-less configurations.
The new rad-hard mosfets have high radiation hardness against total ionising dose and high immunity to single event effects.
For heavy ions with LET (linear energy transfer) less than or equal to 37MeV/mg/cm2, there is no derating of breakdown voltage for gate threshold voltages up to 15V.
For heavy ions with an LET of 82MeV/mg/cm2, there is no de-rating of breakdown voltage for gate threshold voltages up to 8V.
The devices are immune to high-energy particles and are hardened against single event gate rupture (SEGR) and single event burnout (SEB).
The 1Mrad total dose rating allows designers to extend equipment lifetime up to 10 times that of the current designs using a 100Krad device.
IR's devices also provide designers with the option of reducing or foregoing shielding requirements.
The new P-channel R5 RAD-Hard mosfets are available immediately.
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