High-efficiency MOSFETs aim for backplane power

International Rectifier has expanded its family of SOIC-packaged HEXFET power MOSFETs to address the lowest power ranges found in backplane DC/DC convertors in telecomms and datacomms industries.

International Rectifier has expanded its family of SOIC-packaged HEXFET power mosfets to address the lowest power ranges found in backplane DC/DC convertors in the telecomms and datacomms industries.

The new mosfets deliver low currents of less than 2A at the 150 and 200V breakdown voltage ratings required by today's isolated convertor topologies, and the expanded device range includes the industry's first 150V mosfet in a TSOP-6 package.

In distributed power architecture circuits, power modules providing low-power biasing are commonly located on the backplane to save motherboard space.

These biasing circuit power supplies are typically 48V input converters in the sub-20W power range, and the design challenge is to find components optimised and priced for such low power applications.

The new SOIC HEXFET power mosfets balance low RDS(on) to reduce conduction losses with low gate charge and low Miller charge to reduce switching losses and allow operation at high switching frequencies.

The TSOP-6 IRF5802 mosfet features ultra-low gate charge and is an excellent choice for modules delivering 5 to 10W output at operating frequencies up to 1MHz.

The SO-8 IRF7465 mosfet has lower RDS(on) and lower gate charge, and is designed for 10 to 20W modules operating at frequencies up to 500kHz.

For modules requiring 200V mosfets, the IRF5801 (TSOP-6) and IRF7464 (SO-8) provide similar benefits for the 10 to 20W power range.

When compared with existing higher power devices operating in low-power applications, these low-power optimised mosfets demonstrate equivalent in-circuit efficiency in sub-20W applications at a lower cost to the designer.

Samples and production volumes are available immediately.

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