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Product category: Discrete Power Devices
News Release from: International Rectifier | Subject: IRF5810
Edited by the Electronicstalk Editorial Team on 27 September 2001

Two MOSFETs are better in one package

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International Rectifier has introduced the IRF5810 dual MOSFET in a TSOP-6 package which combines two P-channel HEXFET power MOSFETs into a single 1.3 x 2.9mm footprint.

International Rectifier has introduced the IRF5810 dual mosfet in a TSOP-6 package which combines two P-channel HEXFET power mosfets into a single 1.3 x 2.9mm footprint The new device cuts the mosfet part count in half, reducing the footprint by 50% in space-sensitive applications

For example, designers can replace two single TSOP-6 load switches with just one IRF5810.

System cost is also reduced since the new device reduces pick and place cost, and improves manufacturing throughput.

Typical applications include load and battery management circuits in cell phones, PDAs, MP3 players, notebook computers and PCMCIA cards.

The IRF5810 has 40% lower device on-resistance, or RDS(on), than competing dual mosfets in the TSOP-6 package.

Each mosfet within the package performs at 90mohm RDS(on) each.

Lower on-resistance contributes to higher system efficiency, resulting in longer battery life.

An innovative extended leadframe maximises the size of each die in the TSOP-6 outline.

The new leadframe increases current capability and on-state efficiency, yet fits in the standard TSOP-6 footprint.

A single IRF5810 can replace two TSOP-6 devices in load management circuits, or a much larger TSSOP-8 packaged dual mosfet in battery management circuits.

The footprint of a TSOP-6 package is 70% smaller than the TSSOP-8 (2.9 x 4.3mm).

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