MOSFET and diode together save space and cost

International Rectifier has two new P-channel FETKY devices that combine a MOSFET and Schottky diode in a single SO-8 to reduce packaging cost and offer substantial space savings.

International Rectifier has two new P-channel FETKY devices that combine a mosfet and Schottky diode in a single SO-8 to reduce packaging cost and offer substantial space savings.

The IRF5803D2 and IRF7342D2 are additions to IR's line of FETKY devices combining HEXFET power mosfets and Schottky diodes and are ideal for low-cost buck convertor designs used in peripheral applications.

The devices offer up to 60% space savings when compared to a discrete solution.

In a FETKY device, the mosfet and the diode are placed on the same heat spreader.

Packaging the mosfet and Schottky diode in a single package minimises the stray inductance and resistance due to PCB traces and packaging.

Lower stray inductance reduces voltage spikes and increases reliability, while lower resistance results in higher efficiency.

Smaller voltage spikes in the circuit contribute to lower system cost, since device breakdown voltage can be lower.

For example, a buck convertor with a 24V bus can be designed with the 40V P-channel IRF5803D2 instead of a 45V P-channel mosfet.

In addition, P-channel FETKY devices do not require a charge pump or a bootstrap capacitor for high-side drive voltage in buck convertors.

This means that replacing N-channel control mosfets with FETKY devices simplifies drive circuits and reduces system cost.

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