Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: IRFS38N20D and IRFS52N15D
Edited by the Electronicstalk Editorial
Team on 02 September 2002
MOSFETs boost hot-swap convertor
efficiency
New from International Rectifier at Electronica will be a line of 150 and 200V MOSFETs that can increase total efficiency by 1% in isolated DC/DC convertors.
International Rectifier will be showing a new series of 150 and 200V HEXFET power mosfets at Electronica with optimised device on-resistance and gate charge characteristics that increase efficiency by up to 1% in 48V input isolated DC/DC convertors for networking and telecommunication systems The latest mosfets deliver up to 20% higher current carrying capability than the closest competing devices in a TO-220 package and are also offered in the D2Pak and TO-262 packages
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
The IRFS38N20D and the IRFS52N15D are suitable for primary side sockets in single output, board mounted power (BMP) modules or in multiple output power supplies.
These devices can also be used in "hot swap" circuits and active ORing circuits, ensuring reliable system operation.
In a typical 150W half-brick module, the 200V IRFS38N20D delivers 91.5% efficiency at 5V output and 30A load, 1% higher than the industry standard device.
The IR devices also runs 28C cooler than the competing device.
The lower operating temperature enables circuits to occupy a smaller PCB since less area is required to dissipate heat.
Efficiency measurements using the 150V IRFS52N15D on the primary side yielded similar results.
The higher current carrying capability of the new mosfets allows more power to be delivered to the secondary side, which allows designers to increase output power and efficiency in the same form factor or reduce solution size while maintaining output power.
Telecomms systems are required to have superior "up-time" performance.
In order to meet these demands, circuit boards may have to be changed while the power is still on.
To limit inrush current, during circuit board insertion, the controller in the hot-swap circuit must slowly turn the FET on.
IR's HEXFET mosfet technology enables better control during the linear region of operation due to low transconductance, preventing hot spots on the die that can cause failures and system "down-time".
The new HEXFET power mosfets are ideal inrush current limiters in hot-swap circuits, ensuring reliable operation as routine maintenance is performed on redundant power systems.
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