40V MOSFET takes on larger automotive tasks

International Rectifier has developed new automotive HEXFET power MOSFET technology it reckons combines high efficiency with excellent ruggedness.

International Rectifier has developed new automotive HEXFET power mosfet technology it reckons combines high efficiency with excellent ruggedness.

The new automotive-specific trench HEXFET power mosfet technology features 15% lower device on-resistance per unit area than the best-competing technology and excellent avalanche capability.

It offers an avalanche capability comparable to industry-leading planar technology and up to twice that of currently available trench products.

"The IR trench process extends the improvements in electrical efficiency provided by the trench technology to the harsh automotive environment without sacrificing the avalanche ruggedness that automotive system designers have come to expect from planar mosfets", said Tony Hendrix, Director, Automotive Components Business Development at International Rectifier.

The first product using this new trench technology is the Q101-qualified, 40V IRF2804 mosfet suitable for high power automotive applications such as14V integrated starter alternators, 14V synchronous rectifier alternators, electrical power steering systems, and brush- and brushless DC motor controls.

The IR trench mosfet technology will rapidly be extended to the other voltages found in automotive applications with 40, 55, 75 and 100V products.

The new IRF2804 automotive trench mosfet offers the industry-lowest on-resistance of 2.3mohm in the TO-220 package.

In addition, the new IRF2804 has low gate charge per unit area, required for high-frequency operation up to 100kHz.

The high avalanche capability of IR's automotive trench mosfets allows a lower voltage-rated device to be used in an application.

For example, a 40V mosfet can be used instead of a 55V device, taking advantage of the intrinsic lower on-resistance, as long as device maximum junction temperature is not exceeded.

IR's new automotive trench mosfets deliver silicon performance previously unachievable without using a more expensive package, larger die or multiple dies in parallel.

IR's automotive trench mosfets also include 10% lower on-resistance temperature coefficient than competitive devices, which is particularly important in automotive applications where the nominal operating temperatures usually exceed 125C and peak junction temperatures may approach 175C.

Samples of the IRF2804 are available now.

Pricing is US $3.67 each in 10,000-unit quantities.

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