Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: L-Series MOSFETs
Edited by the Electronicstalk Editorial
Team on 15 January 2003
MOSFETs remove the need for extra diodes
International Rectifier has a new 500V L-Series power MOSFET with fast recovery body diode for reliable operation of zero-voltage switching (ZVS) power supplies, especially at light loads.
International Rectifier has a new 500V L-Series power mosfet with fast recovery body diode for reliable operation of zero-voltage switching (ZVS) power supplies, especially at light loads The new devices expand the IR line of mosfets for ZVS power supplies commonly found in telecomms and other high-end switch mode power supplies
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
Related stories
1kV rad-hard power MOSFET saves satellite space
International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
Overcoming device failure is of the utmost importance in an industry where 100% service up time is expected and where wide load excursions are very common.
The new L-Series mosfets eliminate the need for series Schottky and anti-parallel high voltage diodes used in conventional designs, thereby reducing part count, simplifying PCB layouts, reducing overall losses and improving power density.
Zero-voltage switching is emerging as the power supply design of choice for high current power supplies.
Further reading
MOSFETs improve power density on both sides
New from International Rectifier are two TO-220-packaged HEXFET power MOSFETs that maximise power density and performance in primary- and secondary-side DC/DC convertor circuits.
Rad-hard MOSFETs protect and survive
With high radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays.
Power supplies using ZVS circuits operate efficiently at high frequencies, reducing passive component size and increasing power density.
When mosfets are used in ZVS circuits operating at frequencies up to 250kHz, body diode reverse recovery characteristics become critical, especially under light load conditions when the mosfet on time is very short.
Mosfets can only withstand voltage across its drain and source after the integral body diode has completed the reverse recovery period.
The reverse recovery time of the integral body diode has a direct impact on the minimum duty cycle.
The L-Series mosfets, targeted for ZVS applications, have greatly improved body diode characteristics: close to 70% reduction in reverse recovery time - as low as 250ns - the best in the industry.
In addition, the new devices demonstrate over 70% reduction in diode reverse recovery charge, reducing switching losses, and over three times better diode peak recovery immunity compared with standard devices.
The turn-on losses are virtually eliminated in the ZVS architecture power supply designs by turning on the mosfets when its integral body diode is conducting.
By significantly reducing switching losses and the overall losses in the power-switching device, the SMPS can be designed to operate at higher frequencies to reduce the size of passive components, such as transformers and capacitors, thereby increasing its power density.
ZVS is becoming more popular as the industry seeks higher efficiency and higher power outputs in the same or smaller footprint.
Datasheets are available on the International Rectifier website.
• International Rectifier: contact details and other news
• Email this article to a colleague
• Register for the free Electronicstalk email newsletter
• Electronicstalk Home Page
Search the Pro-Talk network of sites
