Product category:
Power Supply ICs and Controllers
News Release from: International Rectifier | Subject: Warp2 NPT IGBTs
Edited by the Electronicstalk Editorial
Team on 27 March 2003
IGBTs aim for high-frequency switchers
The new Warp2 600V 50, 35 and 20A non-punch-through IGBTs feature improved turn-off characteristics for high-current high-frequency switch-mode power supply circuits.
The new Warp2 600V 50, 35 and 20A non-punch-through (NPT) IGBTs feature improved turn-off characteristics for high-current high-frequency switch-mode power supply (SMPS) circuits Ideal in applications such as telecomms and server systems, Warp2 NPT IGBTs offer performance and efficiency with a better price-to-performance value than power mosfets, especially when employed in PFC and ZVS circuits
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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IR's thin wafer technology is employed in the Warp2 ensuring a shorter minority carrier depletion time and hence faster turn-off.
Additionally, a negligible turn-off tail current and low turn-off switching loss enables designers to achieve operating frequencies up to 150kHz.
A higher current density is possible due to improvements in switching performance combined with positive thermal coefficient characteristics and a lower gate turn-on charge.
Similar to power mosfets, the Warp2 IGBTs exhibit excellent current sharing properties when operated in parallel.
Unlike power mosfets, the conduction losses of these IGBTs remain essentially flat.
The new SMPS NPT IGBTs handle as much as 50A in the TO-247 package, which is 85% more current capacity compared to IR's 600V mosfet in the same package, and up to 20A in TO-220 package, or 18% more current capacity compared with IR's 600V mosfet in a TO-220 package.
Warp2 IGBTs are copackaged with HEXFRED diodes also enabling better performance compared with the integral body diodes in power mosfets.
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