MOSFETs shrink automotive power management

A new range of trench HEXFET power MOSFETs includes the IRF2804S with 2.0mohm on-resistance in a D2Pak package.

A new range of trench HEXFET power mosfets includes the IRF2804S with 2.0mohm on-resistance in a D2Pak package.

The new automotive mosfets feature improved efficiency, switching performance, ruggedness and lower gate charge for high power automotive applications.

Their avalanche capability can allow a lower-voltage device to be used, for instance 40V instead of 55V, taking advantage of the lower on-resistance associated with the lower voltage provided the maximum junction temperature is not exceeded.

IR's fabrication process enables minimum device on-resistance with lower temperature coefficient and the avalanche capability required by the harsh automotive environment.

In many applications this enables a shift from larger-packaged devices such as D2Pak to smaller D-Pak devices, reducing power dissipation, system size and cost, while simplifying power management integration into other systems.

Efficient thermal management is essential in high power automotive applications.

IR's new automotive trench mosfets provide extremely low power dissipation per unit area.

They set a new standard of performance in next-generation automotive applications including integrated starter alternator, synchronous rectifier alternators, electrical power steering, brush and brushless DC motor control and antilock brake systems.

All devices are Q101-qualified and rated for both single-pulse and repetitive avalanche up to the maximum junction temperature of 175C.

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