MOSFETs optimised for VRM 10 power systems

International Rectifier has added three new devices to its DirectFET MOSFET family.

International Rectifier has added three new devices to its DirectFET mosfet family.

The new IRF6623, IRF6620, and IRF6609 20V N-channel devices are optimised for VRM 10 power systems and high frequency, high current DC/DC convertors.

Such convertors are targeted at next generation Intel and AMD processors in high-end desktop computers and servers, as well as advanced telecomms and datacomms systems.

The IRF6623 features enhanced control mosfet performance, with a 30% reduction in device on-resistance and gate charge product (figure of merit), and is 50% smaller than other high-performing 20V control mosfets on the market.

In addition, the figure of merit at 4.5V is 48.4mohm-nC, and the Miller charge is 4.0nC, reducing switching losses.

IR's new IRF6620 is ideal for synchronous mosfet applications up to 35A.

The IRF6620 combines very low gate charge, Miller charge and reverse recovery charge with a 30% improvement in on-resistance compared with other currently available high-performing 20V synchronous mosfets.

Typical on-resistance for this product is 2.1mohm (2.7mohm maximum) at 10V.

The IRF6609 is designed for the highest performance in high-current (33A or more) synchronous mosfet applications and combines very low gate charge and Miller charge and ultralow reverse recovery charge with typical device on-resistance of 1.6mohm (2.0mohm maximum) at 10V.

The "metal can" construction of the DirectFET package reduces die-free package resistance and enables double-sided cooling.

As a result, the package offers design advantages not previously available in standard plastic discrete packages.

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