Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: IRGP50B60PD
Edited by the Electronicstalk Editorial
Team on 09 February 2005
IGBT and diode come together to boost
efficiency
The IRGP50B60PD is a 600V nonpunchthrough IGBT copackaged with an enhanced 25A HEXFRED diode capable of operating at switching speeds up to 150kHz.
International Rectifier has introduced the IRGP50B60PD, a 600V nonpunchthrough (NPT) insulated gate bipolar transistor (IGBT) copackaged with an enhanced 25A HEXFRED diode capable of operating at switching speeds up to 150kHz The IRGP50B60PD expands the Warp2 product lineup of high frequency IGBT/HEXFRED diode copack devices
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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1kV rad-hard power MOSFET saves satellite space
International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
The new device has been enhanced with a new, higher current HEXFRED diode designed to handle high reverse current conditions.
In addition, the new copack device features high efficiency performance for high current (1 to 12kW), high frequency switch-mode power supply (SMPS) circuits in telecomms and server systems.
Applications include power factor correction (PFC) and full bridge primary switching, high power UPS, welding and industrial switching applications.
The new Warp2 IGBTs are made with IR's thin wafer technology, which ensures shorter minority carrier depletion time and fast turn-off.
In addition, negligible turn-off tail current and low turn-off switching loss enables designers to achieve higher operating frequencies.
The improvements in switching performance, combined with optimised (positive) thermal coefficient characteristics and the lower gate turn-on charge, enables higher current density.
Positive temperature coefficient ensures safe, reliable, high efficiency current sharing when operated in parallel.
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