Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: 105PF40T
Edited by the Electronicstalk Editorial
Team on 20 May 2005
Compact diode rivals its big brothers
A new DO-5 packaged diode combines high voltage, current and surge capability with excellent thermal efficiency to provide performance that rivals larger DO-8 packages.
International Rectifier's new DO-5 packaged diode combines high voltage, current and surge capability with excellent thermal efficiency to provide performance that rivals larger DO-8 packages The 105PF40T 400V, 105A diode is housed in a plastic DO-5 package making it ideal for heavy duty, industrial applications such as arc welders and storage battery chargers
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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1kV rad-hard power MOSFET saves satellite space
International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
The new diode features very low maximum peak forward voltage (typically 0.98V at 200A) and a thermal resistance of 0.25C/W.
Competing devices have higher thermal resistances from 0.35 to 0.40C/W, making them less efficient.
The glass-passivated silicon chip in the new diode is housed in a threaded, stud-mount plastic package, designed to simplify heatsink mounting.
The single-hole mount also provides flexibility for multiple diode assemblies, such as bridge rectifier circuits.
The 105PF40T is available immediately.
Pricing begins at US $4 each for 1000-unit quantities.
Pricing is subject to change.
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