Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: 30V DirectFET buck convertor chipsets
Edited by the Electronicstalk Editorial
Team on 11 July 2005
MOSFETs pair up to raise convertor
efficiency
Two new 30V MOSFET synchronous buck convertor chipsets suit notebook computer designs where small size, high efficiency and improved thermal conduction are required.
International Rectifier has introduced two new 30V DirectFET MOSFET synchronous buck convertor chipsets for advanced notebook computer designs using the latest Intel and AMD processors where small size, high efficiency and improved thermal conduction are required The new 30V chipsets offer high efficiency over their entire rated load range
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
In addition, these 30V devices offer higher power density than traditional packaging options through the smaller package size and the ability to operate at high current levels using a single control and a single sync MOSFET.
This means improved thermal performance and smaller form factors, necessary for super-compact, battery-efficient, portable and mobile computing.
Each chipset consists of a control MOSFET and a synchronous MOSFET, with each device tailored to maximise performance in their role within a synchronous DC/DC buck convertor circuit.
Further reading
MOSFETs improve power density on both sides
New from International Rectifier are two TO-220-packaged HEXFET power MOSFETs that maximise power density and performance in primary- and secondary-side DC/DC convertor circuits.
Rad-hard MOSFETs protect and survive
With high radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays.
Control MOSFETs have reduced switching losses, whereas synchronous MOSFETs have low conduction losses (low on-resistance), and low reverse-recovery charge.
The first chipset, the IRF6617 control FET and IRF6611 synchronous FET, is designed for optimum performance up to 20A per power channel in high density, space-restricted circuit boards.
The second pair, the IRF6637 control FET and IRF6678 synchronous FET, is designed for increased thermal performance in applications requiring greater than 20A per power channel.
The IRF6617 control FET is housed in a small can (ST) DirectFET package whereas the IRF6637 control FET housed in the medium can (MP) DirectFET package.
To enable an easy migration path for existing designs, both synchronous FETs are housed in the medium can (MX) DirectFET package, allowing a simple change from the IRF6611 to the IRF6678 when more current or increased thermal performance is desired.
The new chipsets also enable circuit designers to shrink high frequency, high current DC/DC convertors used to power high-end desktop computers and servers, as well as advanced telecom and datacom systems.
International Rectifier's patented DirectFET MOSFET packages present a whole new set of design advantages not previously delivered by standard plastic discrete packages.
Their metal can construction enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC/DC buck convertors powering advanced microprocessors.
In addition, devices in the DirectFET packages are lead- and bromide-free.
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