Product category:
Power Supply ICs and Controllers
News Release from: International Rectifier | Subject: IRAC5001
Edited by the Electronicstalk Editorial
Team on 09 August 2005
Active ORing reduces component count
International Rectifier has introduced a reference design for +12V, 100A ORing applications.
International Rectifier has introduced a reference design for +12V, 100A ORing applications Active ORing has long replaced diode ORing in high current 12V systems due to system efficiency and cost benefits
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
Now, the IRAC5001 solution provides a further advance by reducing the number of FETs needed by 50% compared with rivals' equivalent TO-220 devices.
In addition, solution volume is reduced by at least 60%, enabled by the DirectFET MOSFET double-sided cooling capability.
The reference design contains four IRF6609 20V, 2mohm DirectFET MOSFETs in parallel to create a 0.5mohm effective on-resistance for a high efficiency ORing circuit with fast fault detection and reaction time of 130ns.
The "FET check" feature is enabled in this reference design, and allows real-time "FET-good" checking for extra fault protection and the highest possible reliability for high power systems.
Active ORing is a key efficiency requirement for many high-end systems requiring maximum up-time, such as carrier-class communication equipment, telecomms and datacomms system servers.
IR's IR5001S IC is ideal for applications such as high reliability server and storage systems where "N+1" redundant power supplies feed into a central load.
The ORing reference design gives designers a demonstrated means to test the capabilities of IR's new ORing IC in high current applications.
ORing circuits made with the IR5001S and DirectFET MOSFETs can reduce onboard power dissipation and can be made much smaller than diode solutions for the same power level and offers an incredibly fast typical 130ns turn-off delay time.
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