Product category:
Power Supply ICs and Controllers
News Release from: International Rectifier | Subject: R6 line
Edited by the Electronicstalk Editorial
Team on 06 September 2005
Rad-hard MOSFETs cut power drain
New rad-hard MOSFETs are designed for DC/DC convertors, motor controls and solid-state switching circuits with input voltages of 24 to 48V in satellites and other demanding applications.
International Rectifier has launched the R6 line of high-reliability 100, 150, 200 and 250V radiation-hardened MOSFETs for power management circuits The R6 devices are designed for DC/DC convertors, motor controls and solid-state switching circuits with input voltages of 24 to 48V in launch vehicles, satellites and other demanding applications enabling them to be made more compact, reliable and efficient
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
Related stories
1kV rad-hard power MOSFET saves satellite space
International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
For example, the IRHNJ67130, with 0.042ohm device on-resistance reduces power dissipation in power supply applications.
Its low total gate charge of 35nC further reduces power consumption.
The new R6 MOSFETs have SEE ratings to LET of 90MeV and improved prompt dose response and SEE absorption compared with other equivalent devices.
In addition, the new devices are optimised for use in hybrid MIL-PRF-38534 "Class K" modules for satellite applications, including low earth orbit (LEO), middle earth orbit (MEO), geostationary earth orbit (GEO) and deep space missions.
Devices are available in surface-mount as well as new low-ohmic TO-254 and TO-257 packages.
Tab-less TO-254 and TO-257 packages are also available.
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