Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: IRF6648
Edited by the Electronicstalk Editorial
Team on 15 November 2005
Power MOSFET cuts conduction losses
The IRF6648 60V DirectFET power MOSFET features up to 30% lower device conduction losses compared with competing products.
International Rectifier has released the IRF6648, 60V DirectFET power MOSFET featuring a maximum on-state resistance of 7.0mohm (VGS=10V) which enables up to 30% lower device conduction losses compared with competing products A single IRF6648 in the SO-8 footprint can deliver performance similar to two competing "enhanced SO-8" devices operating in parallel
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
These devices are ideal for isolated DC/DC convertors commonly used in telecommunications and networking systems.
When the IRF6648 is used on the secondary side of a regulated 48V input, 12V output, 240W isolated convertor the power density of 72W/in2 can be increased an additional 15%.
This is enabled by taking advantage of the dual-sided cooling capability of the DirectFET MOSFET packaging technology with the addition of a heatsink.
The IRF6648 is a versatile device which can be used in secondary-side, synchronous rectification sockets in 36V to 75V input isolated DC/DC convertors; primary-side, half- and full-bridge isolated DC/DC bus convertors; 24V input, primary-side, forward active clamp circuits and 48V output, AC/DC active ORing systems.
International Rectifier's patented DirectFET MOSFET packages present a whole new set of design advantages not previously delivered by standard plastic discrete packages.
Their metal can construction enables dual-side cooling that effectively doubles the current handling capacity of high frequency DC/DC buck convertors powering advanced microprocessors.
In addition, devices in the DirectFET package are compliant with the Restriction of Hazardous Substances Directive (RoHS).
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