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Product category: Discrete Power Devices
News Release from: International Rectifier | Subject: IRF6662 and IRF6668
Edited by the Electronicstalk Editorial Team on 18 November 2005

MOSFETs cut power system losses

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New power MOSFETs reduce system-level power loss as much as 10% compared with "enhanced SO-8" devices in medium power 200W DC/DC bus convertor applications.

International Rectifier has introduced two DirectFET power MOSFETs that reduce system-level power loss as much as 10% compared with "enhanced SO-8" devices in medium power 200W DC/DC bus convertor applications commonly found in networking and communications systems The low combined on-state resistance and gate charge makes the new IRF6668 80V and IRF6662 100V DirectFET MOSFETs ideal primary-side power switches for high efficiency isolated DC/DC bus convertors

Isolated DC/DC bus convertors power today's ASICs, NPUs and FPGAs in advanced networking and communications systems.

The IRF6668 and IRF6662 can be used with IR's low voltage DirectFET MOSFETs and DC bus convertor control ICs to create a complete and optimised chip set solution for medium-power isolated bus convertors.

When the IRF6662 or IRF6668 are used on the primary side of an unregulated 48V input, 8V output, 200W isolated convertor the power density of 97W/in2 can be increased an additional 15%.

This is enabled by taking advantage of the dual-sided cooling capability of the DirectFET MOSFET packaging technology with the addition of a heatsink.

The 100V IRF6662 has a 4% reduction in device on-resistance compared with competing enhanced SO-8 MOSFETs and a 30% better performance figure-of-merit for combined on-state resistance and gate charge compared with competing enhanced SO-8 devices in 36-75V input, 8V output, 200W, 220kHz half-bridge DC bus convertor.

The 80V IRF6668 has 10% better on-state resistance and 30% better total gate charge, resulting in a 40% better performance figure-of-merit for combined on-state resistance and gate charge compared with competing enhanced SO-8 MOSFETs, enabling up to 10% additional output current in 48V input, 8V output, 200W, 220kHz half-bridge DC bus convertor.

The new DirectFET MOSFETs can be used in either half-bridge DC bus topologies with the IR2085S or in full-bridge DC bus topologies with IR2086S, coupled with secondary-side low voltage DirectFET MOSFETs like the IRF6635 for a complete, high efficiency solution.

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