Product category:
Power Supply ICs and Controllers
News Release from: International Rectifier | Subject: IR1167
Edited by the Electronicstalk Editorial
Team on 21 March 2006
Novel rectifier keeps it cool
The IR1167 SmartRectifier IC improves efficiency in secondary synchronous rectification in high power flyback and resonant half-bridge convertor circuits, enabling smaller, cooler designs.
International Rectifier has launched the IR1167 SmartRectifier IC to simplify and improve efficiency in secondary synchronous rectification (SR) in high power flyback and resonant half-bridge convertor circuits, enabling smaller, cooler designs Typical applications include AC/DC power convertors for laptops, mini-PCs, LCD and PDP televisions, game systems and other digital computing and home entertainment systems
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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International Rectifier has introduced the world's first 1000V radiation-hardened power MOSFET.
MOSFETs improve 12V-input converter efficiency
Two new 20V HEXFET power MOSFET families from International Rectifier are designed to increase efficiency by up to 4% in 12V-input DC/DC convertors.
In 100 to 300W flyback circuits, traditional complex and bulky current transformer control circuits waste energy because large reversing currents are required to sense polarity shifts through the SR MOSFETs.
In contrast, IR's new SmartRectifier IC employs a new technique for precise, direct sensing of voltage thresholds across the SR MOSFETs, allowing fast, accurate control to minimise power losses.
The IR1167 can increase overall system efficiency by 1% and reduce MOSFET temperature by 10 degrees, while slashing SR parts count by 75%.
Further reading
MOSFETs improve power density on both sides
New from International Rectifier are two TO-220-packaged HEXFET power MOSFETs that maximise power density and performance in primary- and secondary-side DC/DC convertor circuits.
Rad-hard MOSFETs protect and survive
With high radiation hardness and unparalleled single event effect (SEE) immunity, International Rectifier's new R5 MOSFETs are well suited for systems that must survive penetrating gamma rays.
The IR1167 SmartRectifier IC uses IR's proprietary HVIC technology, making it compatible with all MOSFET gate types and offers direct connection to IR's wide range of 30 to 200V SR MOSFETs.
The benefits of the IC are further enhanced when used with IR's MOSFETs featuring optimised on-resistance and gate charge characteristics, such as the IRF7853, IRFB4110 and IRFB4227.
These optimised MOSFETs work with the IR1167 as a "total chip set solution" to further maximise efficiency and power density in SR circuits.
As the new IC works independently from the primary control, it can be used in a variety of transformer switching modes and applications with capacitive output filters.
Independence from the primary side means that the IR1167 operates in low power "burst modes" to enable "1W standby".
The SmartRectifier technique halves the losses dissipated in the SR MOSFET.
This reduces the number of MOSFETs needed or allows a change from large TO-220 packages to small, surface mount SO-8 parts.
The IC is available in either SO-8 or DIP-8 packages which are lead-free (PbF) and compliant with the Restriction of Hazardous Substances Directive (RoHS).
In addition to data sheets, application notes and technical papers, new SmartRectifier online design software is now available on IR's myPower site.
Designers enter application conditions and performance requirements to obtain recommended IC and MOSFET chip sets which can be sorted by performance and system cost.
Daughtercards are available which offer a fast and simple way to compare efficiency and simplicity of IR's SmartRectifier solution versus diode designs and complex SR solutions.
Samples are available through product marketing.
Pricing is US $1.08 each for the IR1167A/BSPbF and US $1.11 each for the IR1167A/BPbF, each in 10,000-unit quantity.
Pricing is subject to change.
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