Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: IRF7853PbF, IRF7854PbF, and IRF7855PbF
Edited by the Electronicstalk Editorial
Team on 07 July 2006
N-channel MOSFETs show merit in
conversion
N-channel MOSFETs for switching convertor applications improve the figure of merit for resistance multiplied by charge by as much as 36%.
International Rectifier has introduced a range of N-channel 60, 80 and 100V HEXFET MOSFETs for switching convertor applications used in today's networking and communications systems that improve the figure of merit for resistance multiplied by charge by as much as 36% The IRF7853PbF, IRF7854PbF, and IRF7855PbF are designed for AC/DC secondary-side synchronous rectification, isolated medium-power DC/DC applications
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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Together with IR's low-voltage MOSFETs and controller ICs, these mid-range MOSFETs form secondary-side chipsets for medium-power convertor applications.
In addition, when combined with the SmartRectifier IR1167 in AC/DC power supplies such as laptop adapters, for example, these new SO-8 devices can replace two of their large TO-220 MOSFET counterparts and their associated heatsinks, improving overall system efficiency by as much as 1%.
The 100V IRF7853 is also optimised for wide-range communication bus input (36 to 75V) primary-side bridge topologies in isolated DC/DC bus convertors.
The 80V IRF7854 is useful for active ORing and hot-swap applications.
All three of the MOSFETs are designed for secondary-side synchronous rectification in 5-19V output flyback convertor and resonant half-bridge applications and are suitable for isolated DC/DC applications as primary-side switches in forward or push-pull topologies for 18-36V input isolated DC/DC convertors.
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