Product category:
Discrete Power Devices
News Release from: International Rectifier | Subject: IRF6622, IRF6628 and IRF6629
Edited by the Electronicstalk Editorial
Team on 05 September 2006
MOSFETs help maximise power densities
MOSFETs are designed for applications where high efficiency and improved thermal conductivity are needed to increase power density.
International Rectifier has introduced three new 25V DirectFET MOSFETs The IRF6622 Control MOSFET, and IRF6628 and IRF6629 synchronous MOSFETs are designed for embedded CPU power, VRM modules for servers and telecommunication systems and embedded DC/DC convertors, where high efficiency and improved thermal conductivity are needed to increase power density
This article was originally published on Electronicstalk on 15 Feb 2001 at 8.00am (UK)
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The IRF6622 control MOSFET features very low gate charge (12nC) for minimal switching losses.
The IRF6628 and IRF6629 synchronous MOSFETs are optimised for low conduction loss with very low on-resistance, 1.9 and 1.6mohm, respectively.
The IRF6622 is packaged in a small can DirectFET with an SQ footprint while the IRF6628 and IRF6629 are offered in medium can DirectFET packages with an MX footprint.
The 25V DirectFETs are targeted for 20 to 30A per phase designs.
In a 12V-input 1.3V-output, 300kHz, five-phase design, one IRF6622 and IRF6628 pair per phase achieve efficiency of 88% at 130A together with International Rectifiers XPhase chipset.
Under the same conditions, the IRF6622 and IRF6629 pair reaches higher efficiency, giving 88.5% at 130A.
The DirectFET MOSFETs are RoHS compliant, and datasheets are posted on the International Rectifier website.
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